Asif has a career that spans both engineering and marketing roles in the metals, minerals and electronics industries. He has been providing insights and analysis in the advanced electronics markets for over 11 years, covering wireless networks, fiber optic networks, millimeter wave communications, radar, EW and optoelectronic applications.

After over a decade of immersion in the field, Asif is an acknowledged expert and thought leader in the compound semiconductor industry.

Asif’s current focus at Strategy Analytics includes supporting the defense industry across all the different segments, from platform and systems integrators, sub-system suppliers, software vendors and component and semiconductor technology providers. He regularly attends and speaks at external conferences and webinars on topics ranging from AESA radar, satellite communications and COTS sourcing.

He graduated from the University of Teesside, UK in 1993 with a B.Eng Honours degree in Chemical Engineering, before doing Ph.D research on fatty acids.

Asif is a member of the IEEE (including AESS, MTTS and ComSoc) as well as the IChemE.

John Atherton joined WIN Semiconductors in 2007 as Associate Vice President at WIN Semiconductors, with Sales and Marketing responsibilities for Europe. Befoer joining WIN, he was Head of Technology at Filtronic Compound Semiconductors in Newton Aycliffe, UK with responsibility for both technology, product development and modelling. Prior to that he spent 4 years at M/A-COM Corporate Research and Development in Lowell, USA. He holds BEng and PhD degrees from the University of Leeds, UK.

Dr. Markus Behet received his PhD in Electrical Engineering and Semiconductor Physics from the Technical University Aachen in 1995. From 1995 – 1998 he was R&D Manager for epitaxy and device processing of advanced III/V Semiconductors for High Frequency and Infrared Laser applications at IMEC in Leuven/Belgium. In 1999 he joined the Siemens Semiconductor Division and later Infineon Technologies where he was responsible for Business Development and Technical Marketing of GaAs high-frequency products and foundry projects. From 2002 - 2010 he held several Marketing and Sales positions for GaAs handset, foundry and high-frequency markets at TriQuint Semiconductor. In 2010 he joined Dow Corning as Global Market Manager for SiC and GaN based Power Electronic Solutions.

Iain Black is responsible for the worldwide operations engineering functions at Philips Lumileds, including NPI, sustaining operations, design for manufacturability and product/technology innovation across sites in San Jose, Singapore, Penang and Maarheeze in NL.

In his 25yr career he has worked in a range of process engineering and manufacturing roles within the semiconductor industry in the UK at INMOS Ltd, National Semiconductor, for the last 10 years he has lived in the US working in compound semiconductors at Anadigics and Philips Lumileds.

At Anadigics he was engaged in the creation of the first 6” GaAs RF manufacturing wafer Fab, the introduction of the first BiFET RF process into manufacturing and the construction of the first RF GaAs Fab in mainland China.

He has now served for 3yrs in the LED space at Lumileds, running the SJ Epi manufacturing facility, introducing the industries first 6” HB LED manufacturing operation, before taking on his current position in mid 2010.

Coming soon.

Dr. Michael A. Briere, former Executive Vice President of Research and Development and Chief Technology Officer, joined International Rectifier in November 2003. Prior to his promotion in September 2007, he served as the Executive Vice President, Research and Development, and prior to that, Vice President of Integrated Circuit Development. Among his duties, Dr. Briere was responsible for IR’s GaN development between 2005 and 2007.

Before joining IR, Dr. Briere held technical and leadership roles at IBM, Cherry Semiconductor, ON Semiconductor, and Vicor, where he led a start-up IC subsidiary, Picor. In addition to his time in the semiconductor industry, Dr. Briere has performed research in physics as a member of the staff at leading research institutes including Hahn-Meitner-Institute (HMI) in Germany and Lawrence Livermore National Laboratory (LLNL) in the United States.

Currently Dr. Briere has formed his own executive scientific consulting company, ACOO Enterprises LLC.

Dr. Briere earned his Dr. rer. nat. (Doctorate of Science) in Solid State Physics from the Technical University of Berlin and his MS in Physics and BSEE from Worcester Polytechnic Institute in Massachusetts. He served as Associate Adjunct Professor in Physics at the University of Rhode Island. Dr. Briere is an active member of the IEEE and served on the program committee of the International Symposium for Power Semiconductor Devices and ICs (ISPSD).

Matty Caymax finished his PhD studies at the Department of Chemistry of the K.U.Leuven in 1984 and joined imec in 1985 as scientific staff member. He has since then been working on Si, SiGe and strained-Si epitaxy for application in HBTs, BiCMOS and hetero-MOS. In 2000, he started working on ALD and MOCVD deposition of high-permittivity metal oxides for use as replacement materials for thin gate oxides. Since 2004, his activities cover also materials and processing aspects of devices in Ge and III/V compound semiconductors. Currently, he is Chief Scientist in the Fab and Process Step Technology Unit of imec Belgium. Matty Caymax authored or co-authored ~700 papers about epitaxial growth of semiconductors (group IV, IIIV), deposition of high-k materials, Ge and III/V device processing and related topics and is (co-)author of ~30 patents and two book chapters. He plays an active role in the organization of several international conferences and has also coordinated several European projects.

Mike Czerniak received his PhD at Manchester U., and started as a scientist at Philips’ UK laboratories before moving to its fab in Nijmegen, working on compound semiconductor applications. He was in marketing at Cambridge Instruments and VG Semicon; he is now the product marketing manager of the Exhaust Gas Management Division of Edwards, Clevedon, North Somerset BS21 6TH, UK

email Mike.Czerniak@edwardsvacuum.com

Robert Dwilinski was born in 1965 in Warsaw (Poland). He holds a Master Degree and Ph.D. from the Physics Department of University of Warsaw. At university he was performing projects concerning GaAs, SiC and III-nitrides (1993-1999). Gallium Nitride (GaN) has attracted a great attention for its material properties that are useful for applications in short-wavelength optoelectronic and high power electronic devices, such as white or colour light emitting diodes, blue laser diodes (LD), UV detectors and high-power –high-frequency transistors. At University of Warsaw he initialized and built the technology set up of the ammonothermal growth of GaN at Solid State Physics Dept. Faculty of Physics under supervision of Prof. dr hab. Maria Kami?ska. It was then possible to obtain a fine-crystalline GaN by a chemical reaction between gallium and ammonia, with the presence of alkali-metal amides (LiNH2 or KNH2) added into the reaction zone (so called ammonobasic regime). The latter compounds played the role of mineralizers, highly increasing reactivity of solution. The processes were conducted at temperatures up to 550 °C and under a pressure of 5 kbar. The resulting GaN crystals were obtained in the form of wurtzite-type microcrystalline powder, with the grain size up to 5 ?m. They were characterized by highly intensive photoluminescence with very sharp peaks of near band-edge emission accompanied with diminishing of yellow band [5-16]*. At present, much progress has been done towards enlargement of size of the ammonothermally grown crystals by taking advantage of chemical transport in temperature gradient. The method was greatly developed by Robert Dwili?ski and coworkers in AMMONO sp. z o.o. company in collaboration with Nichia Corporation from the beginning of 2000s .

In 1999 Robert Dwilinski was the co-founder of AMMONO Sp. z.o.o. (Ltd.) specialized in the development and production of Gallium Nitride crystallized by the original ammonothermal method, protected by many patent applications. Since the beginning until today he was the President (CEO) of this company, being the world leader of truly bulk GaN manufacturing. Since 2003 the company began selling the bulk monocrystalline GaN substrates, which was unavailable in the market at that time. These substrates are very useful for the development of low-cost optoelectronic, high-temperature and high-power electronic devices of sufficiently high efficiency, which production is at present limited due to a lack of suitable substrates for growing homoepitaxial structures. Original, proprietary technology and technological needs required designing and building the own laboratory, production and office facility with special installations (implementation of large diameter autoclaves used for simultaneous growth of many GaN crystals), enabling exploitation of sophisticated technological equipment. This was succeeded in 2006 and enabled a further development and enlargement of production scale.

A long company experience in ammonothermal technology resulted in production of high quality bulk c-plane GaN substrates up to 2-inch diameter with perfect crystalline quality (rocking curve FWHM for c-plane of the order 16 arcsec and large lattice curvature exceeding few hundred meters, threading dislocation density of the order of 103 cm-2 ), since the ammonothermal technology enables excellent scalability with the size of the autoclaves and thus growth of many crystals during one process with minimized material costs (closed system) [17-22]. The substrates turned out to be excellent for homoepitaxy, enabling growth of high quality layers characterized by very narrow free exciton lines [19-21].

Recently AMMONO sp. z o.o. increased its assortment by non-polar M-plane and semi-polar GaN wafers, being in the focus of green optoelectronics (green diodes and green semiconductor lasers) due to reduced electric fields in quantum structures grown on such substrates. The size of the obtained substrates (11 mm x 22 mm) is competitive with size offered by other suppliers (Kyma Technologies, Mitsubishi Chemicals) and the crystalline quality is very similar as in the case of polar wafers [23,24].

To conclude, the achievements and inventions of Robert Dwilinski lead to commercial production of unique bulk GaN substrates by original ammonothermal method which may result in breakthrough in high efficient electronic and optoelectronic devices, operating in blue and green range.

*The reference numbers are related with attached publication list of Robert Dwilinski

Marianne Germain is co-founder and CEO of EpiGaN nv, a spin-off created in 2010. She received the M.S. degree and PhD degree in Electrical Engineering from the University of Liege (ULg) in 1993 and 1999, respectively. Until 2001, she was Research Assistant at the Physical Department of ULg involved in characterization of compound semiconductor heterostructures, in collaboration with RWTH Aachen. She has been invited as Visiting Scientist in Purdue University (US) and Wuerzburg University (D). In 2001, she joined IMEC in Leuven (Belgium), where she took part in the development of Gallium Nitride technology for high power/high frequency applications. Since 2004 and 2010, she was Program Manager of IMEC’s “Efficient Power” program, which aimed at developing high-efficiency solutions for power applications beyond the Si limits enabled by GaN-on-Si technology. She also was group leader of the “III-V systems” research group at IMEC between 2007/2010. She pursued training management course in Vlerick Management School (Gent) in 2008/2009. In may 2010, with her colleague Joff Derluyn and Stefan Degroote, she co-founded EpiGaN, a spin-off based licensing imec technology which manufactures and sells GaN-on-Si epiwafers for electronic devices. She has authored and co-authored more than 70 international journal papers and conference communications. She coholds several patents in the field of GaN material and devices.

Todd E. Gillenwater is divisional vice president for RFMD, responsible for developing next generation RF platforms and technologies. He previously held a variety of management positions within RFMD, including Director of Technology, Cellular Line Engineering Director, and Nokia Product Line Engineering Manager.

Prior to joining RFMD in 1997, Mr. Gillenwater was an RF design engineer for Motorola, SPS in Phoenix, Arizona.

Mr. Gillenwater received a Bachelor in Science in Electrical Engineering from Purdue University and served in the US Navy from 1983-1989.

Richard Hill graduated from the University of Glasgow in 2000 and received his doctoral degree in Electrical Engineering from the same institution in 2007. He joined SEMATECH’s Front End Process division in 2009, where he has continued his research into III-V MOSFETs concentrating on VLSI compatible processes and now leads the III-V integration team. He has authored/co-authored over 40 papers.

Rik Jos holds a PhD in Physics from the University of Utrecht. In 1986 he joined Philips Semiconductors in the Netherlands to work on the development of process technologies for RF transistors for power amplifier applications. In 2002 he became a Philips Semiconductor Fellow in the technology development of both active and passive RF devices. At NXP Semiconductors (spun-out of Philips in 2006) he currently heads the innovation of technologies and application architectures for RF power. Since 2004 he is also appointed as adjunct professor at Chalmers University in Sweden. His field of research concerns high-efficiency RF amplifier architectures like switch mode power amplifiers and wide band gap devices, especially GaN high electron mobility transistors.

In April 2010, Lebby joined Translucent Inc. based in Palo Alto, California to head up the company’s R&D efforts to commercialize rare earth oxides for epitaxial based materials. Lebby brings to Translucent a multifaceted experience base ranging from pure research to commercializing products in the semiconductor industry. Lebby’s career has spanned all aspects of the optoelectronics business ranging from research and development, operations, manufacturing, and finance, to sales, marketing, and investing. At Translucent, Lebby will be focusing on bringing to market new rare earth oxide based technologies that have been developed over the past 8years. Crystalline based semiconductor rare-earth oxides exhibit a number of attractive properties for advanced substrate and device solutions that include for example: (a) Natural SOI (silicon on insulator) for the electronics industry using 1-step epitaxial growth techniques i.e. growing single crystal silicon onto rare earth oxides that are lattice matched to silicon substrates; (b) Natural virtual substrates that allow rare earth lattice matched oxides to be lattice matched to other semiconductor materials for novel photonics device and solar cell applications. With more than 180 U.S. patents issued in the field of optoelectronics, Lebby has been cited by the USPTO to be in the most prolific 75 inventors in the country from 1988-1997. Lebby will be strengthening Translucent’s extensive patent portfolio into a broader application base. Lebby will be exploring potential licensing opportunities as the Translucent technology becomes more commercialized.

In 2005, the IEEE Board of Directors elected Lebby to IEEE Fellow for contributions to optoelectronics technology. In 2007, Lebby became an OSA Fellow for his photonics leadership and contributions to VCSEL technology. In 2008, Lebby was elected into the Cosmos Club in Washington DC.

In 1985, Lebby’s research took him to AT&T Bell Laboratories photonics research from the UK government research center RSRE (Royal Signal and Radar Establishment) in Malvern, Worcestershire. This was followed in 1989 by a move to Motorola’s Phoenix Corporate Research Laboratory in Phoenix, Arizona. Lebby researched and developed III-V compound semiconductor devices and focused his work in bringing the VCSEL technology to full scale manufacturing. Lebby co-founded a market changing datacom product called Optobus™.

In August 1998, Lebby joined Tyco Electronics (was AMP) as a member of the Global Optoelectronics Division’s management team, where he was responsible for growing the fiber optic datacom and telecom business through external interactions that include mergers, acquisitions strategic alliances, and technical strategic planning.

In 1999, Lebby joined Intel as a corporate investor and was responsible for sourcing, negotiating, and closing private placement equity deals in the optical networking, component, and semiconductor arenas. Lebby served as Intel’s board observer on a number of photonics based start-ups.

In 2001, Lebby founded a new fiber optics company, Ignis Optics, where he served as the CEO. He led the company to secure a multinational customer base through its development of 10Gbps transceiver products. Ignis Optics was acquired by Bookham Technology (now Oclaro) in October 2003 and Lebby became responsible for corporate and technical strategy at Bookham Technology.

Michael Lebby joined OIDA as Executive Director in 2005 and became its president and CEO in February, 2006. On April 12th 2010, Lebby became OIDA Past President.

Over the past 5 years, Lebby has positioned OIDA as a National resource in the field of optoelectronics and photonics, and has represented industry in many capacities ranging from talks, papers, market and technical reports. Lebby has driven new industry based initiatives in fiber optics broadband as well as the green photonics movement that is now occurring globally.

Under Lebby’s leadership, OIDA’s membership has grown to include many major manufacturers of optoelectronics components, modules and systems. During the last year, Lebby has worked with the FCC to drive higher Internet speeds for consumers with the use of fiber optics. Lebby is positioning OIDA to assist the optoelectronics industry in their recovery, and also to help both US State and Federal governments in their drive to increase skilled optoelectronic jobs, R&D, and manufacturing. The annual OIDA market technology report has become one of the most extensive reviews available for OIDA members that forecasts optoelectronics and photonics technologies for the next decade.

Lebby’s recent activities at OIDA have raised the profile of ‘green photonics’ from both a technology and a marketing standpoint. After reviewing the photonics technology forecasts over the next decade, it became clear to OIDA that green photonics is poised to for significant growth globally. With a green photonics workshop (Sept 2008), and a full peer-reviewed technical conference with over 100 papers (May 2009), and a new conference (June 2010) Lebby is helping the segment to become better defined. Lebby has stated publically in numerous plenary and keynote talks that photonics will quickly grow to be a strong enabler for energy efficient systems in the future.

Lebby is also trying to raise national awareness in a number of photonics arena such as: photonics foundry (both InP and silicon photonics); USA based on-shore photonic manufacturing, assembly, and packaging; the use of more photonics in broadband networks; the threat of fiber optic communication network issues (especially in core systems as traffic continues to grow, or even the rationing of bandwidth by carriers who refuse to build out fiber optics for everyone at the edge); how to attain 1Tbps photonic devices; technical challenges of photonic integrated circuits (PICs); new opportunities for photonic sensing, and energy efficient photonic solutions such as: thin film multi-junction solar cells, plastic photonics (flexible lighting solutions), and novel applications of high brightness LEDs in consumer markets for solid state lighting.

Mr. Liesabeths currently serves as a Vice President of Sales & Marketing and has over 20 years of experience in the semiconductor, display and crystal components industry. Prior to joining SemiSouth, he was a member of the board of Micro Crystal AG (a member of the Swatch Group) in Switzerland from 2008 – 2011 and he was in charge as a Vice President of Sales & Marketing for the worldwide business. From 1995 – 2008, Mr. Liesabeths served in various manager and director roles, most recently as Vice President of Sales & Marketing and member of the board of Epson Europe Electronics GMBH the European business of the Epson electronic component business. From 1992- 1995 he worked as a Sales Engineer for STMicroelectronics. Mr. Liesabeths holds a Dipl.-Ing.(TH) degree in Electronics Engineering.

Drew Nelson joined BT Research Laboratories in 1981, leading the group responsible for the development of MOCVD technology for the manufacture of opto-electronic devices for optical fibre communications. He subsequently managed the technology transfer from BT to Agilent. Together with Mike Scott, he founded EPI in 1988, becoming Managing Director in 1991 and Chairman and Chief Executive Officer in 1996. Dr Nelson was appointed Chairman and Chief Executive Officer of IQE Plc in April 1999 and became Chief Executive Officer in February 2002 when he split his role and Dr Godfrey Ainsworth was appointed to the role of Chairman.

Dr. John Palmour has been with Cree, Inc. since February 1988, and is a co-founder of the company. Dr. Palmour's previous positions with Cree include Executive Vice President, Senior Scientist, Manager of Transistor Products, and Director of Advanced Devices. Dr. Palmour has authored or co-authored over 225 publications and is co-inventor on 35 U.S. patents and 44 foreign patents. He received both a Bachelors degree and a Ph.D. in Materials Science and Engineering from North Carolina State University.

Sanjay Raman is currently serving as a Program Manager in the Microsystems Technology Office (MTO) at DARPA. He is on assignment to DARPA from Virginia Tech where he is a Professor of Electrical and Computer Engineering. His programmatic interests include: silicon-based RF/microwave mm-wave circuits; adaptive, self-correcting mixed-signal circuits; high-speed compound semiconductor devices and circuits; heterogeneous integration; and communications and sensor microsystems. He received his Ph.D in Electrical Engineering from the University of Michigan in Electrical Engineering in 1998, and his Bachelor's degree in EE from Georgia Tech in 1987. From 1987-1992 he served as a Nuclear trained submarine officer in the U.S. Navy.

Dr. Raring received his Ph.D. in Materials Science from the University of California, Santa Barbara in 2006 where he developed advanced InP-based photonic integration schemes culminating in the first single-chip 40 Gb/s optical transceiver. After completing his work at UCSB, Dr. Raring joined Sandia National Laboratories as a Senior Member of Technical Staff where he continued to develop high-functionality photonic integrated circuits. In 2008 Dr. Raring joined Soraa Inc. as a founding employee and has led the development of state-of-the-art blue and green InGaN-based laser diodes fabricated on nonpolar/semipolar GaN substrates. With over 10 years of experience in compound semiconductor and optoelectronic device technology, Dr. Raring has authored or co-authored over 100 technical papers and conference presentations.

Yole Développement (www.yole.fr) is a market research and strategy consulting company based in Lyon, France.

Dr Philippe Roussel has headed the Compound Semiconductors division since 1998. Yole produces numerous market reports and is currently publishing their analysis of the SiC, GaN, AlN, power and RF device as well as high-brightness LED markets.

Dr. Philippe ROUSSEL is graduated from the University of LYON in Electronics and Microelectronics. He was granted a Ph-D in Integrated Electronics Systems from the Applied Sciences National Institute (INSA) in LYON. He is working at YOLE DEVELOPPEMENT since 1998 and is leading the techno-economical market analysis in the fields of Compound Semiconductors and Power Electronics at materials, equipment and devices level.

Silvia Schwyn Thöny is a Senior Process Engineer at Evatec. She has a strong background in physical vapor deposition technologies for applicationswithin optoelectronics, semiconductors and optics. In previous positions at SwissOptic and Balzers she focused on thin film deposition of optical interference filters and recently at Espros Photonics on coatings in semiconductor manufacturing. Combining knowledge of both optics and semiconductors is essential for the successful application of TCO-films on GaN for LED applications. Silvia Schwyn Thöny received her first degree and Ph.D. in experimental physics from Swiss Ferderal Institute of Technology, Zürich, Switzerland, in 1987 and 1993 respectively. In her Ph.D and later in her PostDoc at Stanford University she worked on epitaxial deposition of ferroelectrics by RF sputtering and pulsed laser deposition methods mainly for optical applications.

Philip Smallwood is a Lighting Market Analyst based in IMS Research’s Austin office. Philip holds a Bachelor of Art’s degree from the University of North Carolina – Chapel Hill and a Masters in Business Administration from George Washington University. Prior to joining IMS Research, he was a Clean Energy Associate at a renewable energy consulting firm, assisting large industrial and commercial clients navigate the U.S. and global renewable energy markets. Philip is the author of IMS’s annual lighting report.

25 years research and development of compound semiconductor transistor and monolithic integrated circuit technologies first with Philips Research Labs, UK and subsequently at the University of Glasgow. Initially working on short gate length compound semiconductor HEMTs and MMICs for mm-wave applications, in which he established a team of 12 researchers in Glasgow. More recently, built and coordinated a 20 strong team in the area of III-V MOSFETs addressing the growth of III-V oxides, electrical and TEM-based metrology, physics-based device modelling, sub-22 nm process module development, integration and device demonstration. Demonstrable expertise in aggressively scaled compound semiconductor device process module development; high performance compound semiconductor HEMT, MOSFET and planar Gunn diode device design and optimisation; characterisation of gate dielectrics for III-V MOSFETs; compound semiconductor transistor based MMIC design and fabrication; high Q, low loss passive MMIC components and integrated antennas; mm-wave on-wafer test and measurement. (Co-)authored 269 journal and conference papers to date in these areas. Secured over $15M to date as lead investigator on UK, European, and US governmental agency and industry funded projects in the areas of advanced compound semiconductor devices and circuits.

 Thomas Uhrmann is Business Development Manager for Compound Semiconductors and Si-based Power Devices at EV Group (EVG). In his current role, he is responsible to introduce and manage technological innovations for the fabrication of high-brightness light emitting diodes (HB-LEDs) at EVG.

Uhrmann holds an engineering degree in mechatronics from the University of Applied Sciences in Regensburg and a PhD in microelectronics from Vienna University of Technology.

Uhrmann authored and co-authored several papers on semiconductor diode structures, micro- or nanomagnetism and related areas. 

Jan-Gustav Werthen brings more than 26 years of technology experience to JDSU. As senior director of Photovoltaics, Jan drives overall business and product development that includes power-over-fiber products and solar CPV cells. Jan joined JDSU in 2005 as part of the acquisition of company that he founded called Photonic Power Systems, Inc.

From 1992 – 2005, Jan was CEO of Photonic Power Systems, where he built a semiconductor device and subsystems organization from the ground up and grew sales over $1 million annually, addressing worldwide markets.

Prior to running his own company, Jan held management positions at companies such as VS Corporation, an early player in the fiber-to-the-home market, Varian Associates, and Xerox.

Jan received his Ph.D. and M.S. in Materials Science and Engineering from Stanford University.

Peide Ye received the B.S. in Electrical Engineering from Fudan University in Shanghai, P.R. China in 1988 and Ph.D. in Physics from Max-Planck-Institute in Solid State Research in Stuttgart, Germany, in 1996. Between 1996 and 2000, he was postdoc researcher at NTT Basic Research Laboratories in Japan and National High Magnetic Field Laboratory / Princeton University in U.S.A. Between 2001 and 2002, he was Member of Technical Staff at Bell Labs of Lucent Technologies and Agere Systems in New Jersey, U.S.A. and became Senior Member of Technical Staff in 2003. He joined in School of Electrical and Computer Engineering at Purdue University as Associate Professor in January 2005 and becomes Full Professor in 2010, working on atomic layer deposition, high-k/III-V MOSFETs, quantum/spin transport and devices on graphene, complex oxides and topological insulators.